Study of Cs-loaded SiO2 glass by thermal analysis and positron annihilation spectroscopy
نویسندگان
چکیده
منابع مشابه
Positron annihilation studies of silicon-rich SiO2 produced by high dose ion implantation
Positron annihilation spectroscopy ~PAS! is used to study Si-rich SiO2 samples prepared by implantation of Si ~160 keV! ions at doses in the range 3310–3310 cm and subsequent thermal annealing at high temperature ~up to 1100 °C!. Samples implanted at doses higher than 5 310 cm and annealed above 1000 °C showed a PAS spectrum with an annihilation peak broader than the unimplanted sample. We disc...
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